Si(111)7×7 and Si(111)√3¯×√3¯-al surface-structure analysis by ion-induced Auger-electron spectroscopy
- 15 December 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (17) , 9107-9114
- https://doi.org/10.1103/physrevb.36.9107
Abstract
Si(111)7×7 and Si(111)√3 × √3 -Al surface structures have been studied by ion-induced Auger-electron spectroscopy. It has been revealed that the azimuthal dependence of the Auger-electron yield is very sensitive to differences in surface atomic structure at grazing ion incidence. Experimental results have been compared with computer simulations. It has been found that the dimer-adatom stacking-fault model is best as the Si(111)7×7 structure model, and as yet no model proposed for the Si(111)√3 × √3 -Al structure has been satisfactory.Keywords
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