Analytical Solutions of the Boltzmann Transport Equation. I. Carrier Transport Phenomena in Nondegenerate Semiconductors at Low Fields

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Abstract
By expressing the carrier distribution function in a power series, a self-consistent method is presented for solving analytically the Boltzmann transport equation. Using an iterative technique, this method enables the calculation of carrier mobilities in nondegenerate semiconductors to any desired degree of accuracy at fields of any strengths. A "mesh" diagram is proposed for the calculation of the low-field mobilities governed by polar-optical scattering. It is shown that the results obtained by relaxation-time approximation under some conditions are rather poor. The effect of applied magnetic field is also discussed in some detail.

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