Characterization of Residual Impurities in Highly Pure Si Crystals by Photoluminescence Technique

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Abstract
The residual impurities in highly pure Si crystals have been evaluated by the photoluminescence (PL) technique. The PL method makes it possible to identify the species of donor and acceptor impurities in the parts-per-trillion atomic (ppta) range and to determine their respective concentrations. The PL analysis of the float-zoned (FZ) ingot slightly contaminated by Al shows that the Al content increases greatly from the head to the tail, while the P and B contents are hardly changed. This corresponds with the variation of the segregation effect. The purification process by multipass vacuum FZ is also evaluated by the PL technique. The Ga components appear only in the starting material and the P content decreases greatly with pass number, while the B content decreases slightly. The PL analysis directly confirmed that this purification process is due mainly to the evaporation effect.

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