Electrical resistivity of rf-sputtered iron oxide thin films

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Abstract
The resistivities of as‐sputtered Fe3O4, partially transformed Fe3O4/γ‐Fe2O3, and γ‐Fe2O3 films were measured in the temperature range of 4.2–300 K. A resistivity anomaly was observed in Fe3O4 films and can be identified with the Verwey transformation. For Fe3O4 as well as γ‐Fe2O3 films, the conductivity follows a simple exponential law for 33–72 K and 44–300 K, respectively. The values of the activation energy were determined. For Fe3O4 films this energy is much smaller than that of the single crystals.