Epitaxy of LiF on Ge(100)
- 21 October 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (17) , 2174-2176
- https://doi.org/10.1063/1.106091
Abstract
It is shown that LiF(100) films with the electronic properties of cleaved bulk LiF crystals can be grown epitaxially on Ge(100). These include an exceptionally large, negative electron affinity of −2.7 eV, which leads to intense photoemission at zero kinetic energy. The valence band offset ranges from 7.3–7.6 eV.Keywords
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