Diamond Epitaxial Growth by Gas-Source Molecular Beam Epitaxy with Pure Methane
- 1 October 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (10A) , L1297-1300
- https://doi.org/10.1143/jjap.34.l1297
Abstract
Diamond epitaxial films with a thickness of 200-350 Å have been successfully grown on C(100) surfaces by gas-source molecular beam epitaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta-patterned substrates to be 15 kcal/mol. This value is close to the activation energy of H2 desorption on C(100), suggesting that the diamond epitaxial growth rate by this GSMBE is limited by hydrogen desorption.Keywords
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