Recombination of Electrons and Holes at Dislocations

The phenomenon of hole-electron recombination at dislocations is examined, and it is demonstrated that the space charge barrier surrounding the dislocation may have a dominant effect in determining the characteristics of recombination. In particular, the inclusion of the space charge effect leads directly to the slow decay phenomena observed in silicon and $n$-type germanium. The characteristics of electrical fluctuations due to trapping at these levels are discussed on the basis of the model.