0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time

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Abstract
Highly excited states of the 0.79 eV luminescent defect observed in photoluminescence excitation (PLE) measurements are interpreted as effective-mass (EMT) states of a pseudo-donor with Ei=38.3 meV. The interpretation implies that the 1s ground state of the donor electron is fivefold split in the C1h symmetric strain field of the defect. Modelling of the internal deformation around the defect by a compressive uniaxial field of 80 MPa along (001) allows the authors to explain the ground state splitting quantitatively and gives rise to a re-interpretation of published uniaxial stress data. Transient decay data suggest that the lowest excited defect state is a split singlet-triplet bound exciton, the 0.79 eV line being emitted by the higher-energy singlet.