Effect of unequal ionization rates on GaAs IMPATT device admittance
- 1 November 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 21 (11) , 729-730
- https://doi.org/10.1109/T-ED.1974.18000
Abstract
The effect of the recently reported unequal ionization rates in GaAs on small signal IMPATT device admittance has been calculated and is compared with equal ionization rate results at room temperature. The ionization rate effect on the static breakdown voltage has also been obtained.Keywords
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