1.54 μm room-temperature luminescence of MeV erbium-implanted silica glass
- 24 December 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (26) , 2859-2861
- https://doi.org/10.1063/1.104203
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- An overview of ion-implanted optical waveguide profilesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- 1.54 μm photoluminescence of erbium-implanted siliconMaterials Science and Engineering: B, 1989
- Characteristics of rare-earth element erbium implanted in siliconApplied Physics Letters, 1989
- Radiation damage in vitreous fused silica induced by MeV ion implantationJournal of Non-Crystalline Solids, 1988
- High-gain erbium-doped traveling-wave fiber amplifierOptics Letters, 1987
- Low-noise erbium-doped fibre amplifier operating at 1.54μmElectronics Letters, 1987
- Tunable single-mode fiber lasersJournal of Lightwave Technology, 1986
- Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaPJournal of Applied Physics, 1986
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983
- Radiation defects and optical properties of ion implanted silicon dioxideRadiation Effects, 1980