X-ray and electron microscopy studies of arsenium implanted silicon crystals after a pulsed laser annealing
- 1 January 1983
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 18 (2) , 173-177
- https://doi.org/10.1002/crat.2170180207
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Influence of non‐uniformity of laser beam intensity on the surface layer structure of implanted silicon crystalsCrystal Research and Technology, 1982
- X-ray studies of boron implanted germanium single crystalsPhysica Status Solidi (a), 1980