Growth and properties of scandium epitaxial films on GaN
- 3 June 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (23) , 3248-3250
- https://doi.org/10.1063/1.116563
Abstract
Epitaxial scandium films have been grown on c‐axis‐oriented wurtzite GaN. The films are highly ordered, adherent, and reflective. For substrate temperatures in the range 640–780 °C an interfacial reaction yields a ScN layer whose thickness increases with temperature, consistent with Sc diffusion as the rate limiting step. Electrical contacts fabricated from the Sc/ScN/GaN films exhibit a 1.0 eV barrier height on n‐type GaN. The Sc films, which represent a class of ductile materials, may constitute a compliant substrate for overgrowth of GaN.Keywords
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