Correlation between the residual resistance ratio and magnetoresistance in MgB2

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Abstract
The resistivity and magnetoresistance in the normal state for bulk and thin-film MgB2 with different nominal compositions have been studied systematically. These samples show different temperature dependences of normal state resistivity and residual resistance ratios although their superconducting transition temperatures are nearly the same, except for the thin-film sample. It is found that the magnetoresistance (MR) in the normal state scales well with the residual resistance ratio (RRR), a0(MR) proportional to (RRR)^2.2 +/- 0.1 at 50 K and under 5 Tesla. This accounts for the large difference in magnetoresistance reported by various groups, due to different defect scatterings in the samples.

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