An application of EELS in the examination of inclusions and grain boundaries of a SiC ceramic
- 1 October 1981
- journal article
- Published by Wiley in Journal of Microscopy
- Vol. 124 (1) , 49-56
- https://doi.org/10.1111/j.1365-2818.1981.tb01304.x
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Pre-spectrometer optics in a CTEM/STEMUltramicroscopy, 1980
- Boron Transport and Change of Lattice Parameter During Sintering of β‐SiCJournal of the American Ceramic Society, 1980
- Observations of silicon carbide by high resolution transmission electron microscopyJournal of Microscopy, 1978
- The microanalysis of light elements using transmitted energy loss electronsUltramicroscopy, 1975
- Effect of Boron and Carbon on Sintering of SICJournal of the American Ceramic Society, 1975
- Photoabsorption near theEdge of Silicon and AluminumPhysical Review B, 1970
- The SiC phase in the system SiCB4CCMaterials Research Bulletin, 1969
- Semiconductivity of CdS as a function of s-vapor pressure during heat treatment between 500° and 700° CMaterials Research Bulletin, 1969
- Angular Dependence of the Characteristic Energy Loss of Electrons Passing Through Metal FoilsPhysical Review B, 1956
- The Dielectric Theory of Electronic Interactions in SolidsProceedings of the Physical Society. Section A, 1955