Recombination lasing in heliumlike silicon: a possible path to the water window
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Plasma Science
- Vol. 16 (5) , 529-533
- https://doi.org/10.1109/27.8960
Abstract
A major goal of current X-ray laser research is the achievement of gain in the 23.3-43.7 AA wavelength region, known as the 'water window'. Silicon is the lowest atomic number element for which all the heliumlike 3-2 transitions lie in this region. The authors examine the fundamental kinetics of recombination lasing in this species, and conclude that the Si XIII 1s3d/sup 1/D/sub 2/-1s2p/sup 1/P/sub 1/ line at 39.1 AA is an attractive candidate for recombination-pumped lasing. Attainment of gain in this line is somewhat more energetically favorable than for the hydrogenic Al XIII 3-2 transitions, but radiative trapping may be somewhat more troublesome than for H-like Al.Keywords
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