Generalized Photoelectromagnetic Effect in Semiconductors

The photoelectromagnetic (PEM) response of high-purity single-crystal $n$-type InSb has been measured over the temperature range 80-300°K. A comparison of the data with the results of a theoretical treatment of the PEM effect, generalized to include bulk generation at arbitrary magnetic field, gives values for the surface-recombination velocity on this material both as a function of temperature and of surface preparation. The results also include the first reported observation of a negative PEM response due to the diffusion of carriers into recombination sites at the illuminated sample surface.