Photoelectric Yield of Aluminum from 300 to 1300 Å
- 1 January 1965
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 36 (1) , 19-21
- https://doi.org/10.1063/1.1719314
Abstract
The photoelectric yield of aluminum type 5086‐H32 containing 94% Al and 4% Mg has been measured at wavelengths between 300 and 1300 Å. At 584 Å the yield increased by 50% when the angle of incidence was changed from 0 to 50°. At 1026 Å the yield remained nearly constant for such a rotation. In general the yield was a function of the wavelength, the angle of incidence, and the degree of polarization of the incident radiation. The photoelectric yields were found to be stable and reproducible.Keywords
This publication has 8 references indexed in Scilit:
- Fatigue Effects in the Luminescent Yield of Sodium SalicylateApplied Optics, 1964
- Absolute Intensity Measurements in the Vacuum Ultraviolet*†Journal of the Optical Society of America, 1964
- A Spectrophotometer for Determining Optical Constants in the Vacuum Ultraviolet RegionJapanese Journal of Applied Physics, 1963
- Optical and Photoelectric Properties of Thin Metallic Films in the Vacuum Ultraviolet*Journal of the Optical Society of America, 1959
- Photoelectric Yields in the Vacuum UltravioletJournal of Applied Physics, 1955
- Photoelectric Emission in the Extreme UltravioletPhysical Review B, 1954
- Photoelectric Cells for the Vacuum UltravioletJournal of the Optical Society of America, 1953
- Intensity Measurements in the Vacuum UltravioletJournal of the Optical Society of America, 1953