An improved technique for selective etching of GaAs and Ga1−xAlxAs
- 1 December 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (12) , 6441-6442
- https://doi.org/10.1063/1.327598
Abstract
An improved technique is described for selectively etching ’’windows’’ in GaAs crystals with Ga1−xAlxAs (0.30⩽x⩽ 0.80) epitaxial layers. A reduction factor of 10–50 in the sample preparation time is achieved with a good reproducibility.This publication has 1 reference indexed in Scilit:
- Optical waveguides in GaAs–AlGaAs epitaxial layersJournal of Applied Physics, 1973