Electronic line-up in light-emitting diodes with alkali-halide/metal cathodes
- 15 May 2003
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 93 (10) , 6159-6172
- https://doi.org/10.1063/1.1562739
Abstract
The electronic nature of metal-semiconductor contacts is a fundamental issue in the understanding of semiconductor device physics, because such contacts control charge injection, and therefore play a major role in determining the electron/hole population in the semiconductor itself. This role is particularly important for organic semiconductors as they are generally used in their pristine, undoped form. Here, we review our progress in the understanding of the energy level line-up in finished, blue-emitting, polyfluorene-based light-emitting diodes, which exploit LiF and CsF thin films in combination with Ca and Al to obtain cathodes with low injection barriers. We have used electroabsorption measurements, as they allow the noninvasive determination of the built-in potential when changing the cathode. This provides precious experimental information on the alteration of the polymer/cathode interfacial energy level line-up. The latter is found to depend strongly on the electrode work function. Thus, the Schottky–Mott model for the energy level alignment is found to be a better first-order approximation than those models where strong pinning or large interface dipoles determine the alignment (e.g., Bardeen model), except for electrodes that extensively react with the polymer, and introduce deep gap states. In addition, we show results that validate the approximation of rigid tilting of polymer energy levels with bias (for biases for which no significant injection of carriers occurs). To investigate further the consequences of the electronic line-up on device operation, we complemented the electroabsorption measurements with characterization of the emissive and transport properties of the light-emitting diodes, and confirmed that the cathodic barrier lowering in CsF/Ca/Al and LiF/Ca/Al electrodes leads to the best improvements in electron injection. We found that luminance and overall current are greatly affected by the barrier-reducing cathodes, indicating a truly bipolar transport, with comparable electron and hole currents. We also found significant indications of CsF/Ca/Al cathodes strongly reacting with the polymer, which is suggestive of CsF dissociation and diffusion in the bulk of the polymer.This publication has 93 references indexed in Scilit:
- Transient and steady-state space-charge-limited currents in polyfluorene copolymer diode structures with ohmic hole injecting contactsApplied Physics Letters, 2000
- Molecular-scale interface engineering for polymer light-emitting diodesNature, 2000
- Built-in field electroabsorption spectroscopy of polymer light-emitting diodes incorporating a doped poly(3,4-ethylene dioxythiophene) hole injection layerApplied Physics Letters, 1999
- Doped conducting-polymer–semiconducting-polymer interfaces: Their use in organic photovoltaic devicesPhysical Review B, 1999
- Improved operational stability of polyfluorene-based organic light-emitting diodes with plasma-treated indium–tin–oxide anodesApplied Physics Letters, 1999
- Indium–tin oxide treatments for single- and double-layer polymeric light-emitting diodes: The relation between the anode physical, chemical, and morphological properties and the device performanceJournal of Applied Physics, 1998
- Gap-State Induced Photoluminescence Quenching of Phenylene Vinylene Oligomer and Its Recovery by OxidationPhysical Review Letters, 1997
- Effects of Al, Ag, and Ca on luminescence of organic materialsJournal of Vacuum Science & Technology A, 1997
- Polymeric anodes for improved polymer light-emitting diode performanceApplied Physics Letters, 1997
- Dramatic photoluminescence quenching of phenylene vinylene oligomer thin films upon submonolayer Ca depositionApplied Physics Letters, 1996