Laser annealing of ion implanted GaAs

1 January 1979

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 50 (1) , 610
https://doi.org/10.1063/1.31725

Abstract

Laser annealing of GaAs implanted at room temperature with 1.10¹⁵ or 5.10¹⁵ ions/cm² of Te⁺, Se⁺, Sn⁺ and Ge⁺ ions has been studied. Depending on the dose, a single pulse from a Q‐switched ruby laser produced, in general, electron concentrations in excess of 1.10¹⁹ cm⁻³ for both coated and non‐coated samples. However, mobility values were low, indicative of the presence of a large concentration of ionised impurities. Significant indiffusion of Te nd Sn atoms was observed following laser irradiation.

Keywords

GALLIUM ARSENIDES
ANNEALING
LASER−RADIATION HEATING
ION IMPLANTATION
RUBY LASERS
Q−SWITCHING
CRYSTAL DOPING
ELECTRICAL PROPERTIES
TELLURIUM IONS
SELENIUM IONS
TIN IONS
GERMANIUM IONS

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