Possible sources of error in the deduction of semiconductor impurity concentrations from Schottky-barrier (C, V) characteristics

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Abstract
Experimental results are presented which show that surface contamination due to the method of preparation and bulk trapping centres can have a first-order effect on semiconductor impurity concentration measurements using Schottky barriers. A criterion is established which allows the reliability of the measurements to be assessed, and a method is given for measuring the impurity concentration in the presence of traps.