Characterisation of GaInP/GaAs double heterojunction bipolar transistors with different collector designs
- 14 October 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (21) , 1881-1883
- https://doi.org/10.1049/el:19931252
Abstract
The characteristics of InGaP/GaAs:C double-heterojunction bipolar transistors (DHBTs) with different collector layer designs are investigated and compared with those of a single heterojunction bipolar transistor. By inserting highly-doped n-type GaAs and InGaP layers in the collector, current saturation characteristics of a DHBT, comparable to those of a single heterojunction bipolar transistor, are achieved. The breakdown voltage of the DHBT was substantially higher than that of a single-heterojunction bipolar transistor with the same collector doping and thickness.Keywords
This publication has 0 references indexed in Scilit: