Carrier injection and backgating effect in GaAs MESFET's
- 1 April 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (4) , 97-98
- https://doi.org/10.1109/EDL.1982.25493
Abstract
The relation between the backgating effects on GaAs MESFET's and current conduction in the semi-insulating substrate is studied. The onset voltage of the backgating effect is found to coincide with the trap-fill-limited voltage for the substrate conduction. This observation implies that carrier injection in the substrate is directly related to the backgating effect.Keywords
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