Low defect planar SOI islands adjacent to selective epitaxial growth (SEG)

This publication has 3 references indexed in Scilit:

• Fully planar method for creating adjacent ‘‘self-isolating’’ silicon-on-insulator and epitaxial layers by epitaxial lateral overgrowth
  Applied Physics Letters, 1992
• SOI design for competitive CMOS VLSI
  IEEE Transactions on Electron Devices, 1990
• High-speed, low-power, implanted-buried-oxide CMOS circuits
  IEEE Electron Device Letters, 1986