InAlGaAs impact ionization rates in bulk, superlattice, and sawtooth band structures
- 19 December 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (25) , 3248-3250
- https://doi.org/10.1063/1.112427
Abstract
Electron and hole impact ionization rates in bulk, superlattice, and sawtooth band structures consisting of an InAlGaAs system are determined from their photomultiplication characteristics. The impact ionization rate ratios are derived as 2.2, 3.0, and 3.6 for the bulk, superlattice and sawtooth structures, respectively, at an electric field of 470 kV/cm. The hole impact ionization rate in the InAlGaAs sawtooth structure is nearly equal to that of the InAlAs/InAlGaAs rectangular-well superlattice. In contrast, the electron impact ionization rate in the sawtooth structure is larger than that in the superlattice. This difference is attributed to a lack of energy loss for electrons at the staircase band condition in the sawtooth structure.Keywords
This publication has 15 references indexed in Scilit:
- 10-Gb/s strained MQW DFB-LD transmitter module and superlattice APD receiver module using GaAs MESFET IC'sJournal of Lightwave Technology, 1994
- InAlGaAs Staircase Avalanche PhotodiodesJapanese Journal of Applied Physics, 1994
- High-sensitivity 10 Gbit/s optical receiver with superlattice APDElectronics Letters, 1993
- High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth productIEEE Photonics Technology Letters, 1993
- InGaAsP/InAlAs superlattice avalanche photodiodeIEEE Journal of Quantum Electronics, 1992
- Theoretical study of multiquantum well avalanche photodiodes made from the GaInAs/AlInAs material systemIEEE Transactions on Electron Devices, 1986
- A new method to control impact ionization rate ratio by spatial separation of avalanching carriers in multilayered heterostructuresApplied Physics Letters, 1982
- The graded bandgap multilayer avalanche photodiode: A new low-noise detectorIEEE Electron Device Letters, 1982
- Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratioApplied Physics Letters, 1982
- Impact ionisation in multilayered heterojunction structuresElectronics Letters, 1980