Relation of transport properties to microstructure of implantedalloys
- 15 February 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (5) , 2495-2501
- https://doi.org/10.1103/physrevb.37.2495
Abstract
We have measured the composition dependence of the resistivity and Hall constants in films prepared by the low-temperature implantation technique. In the concentration range 0≤x≤0.28, the system goes from the crystalline (and ferromagnetic) to the amorphous (and paramagnetic) state. A quantitative interpretation of our results is presented, based on previous knowledge of the implanted system’s structural properties in the same composition range. This analysis provides new information on the magnetism of amorphous clusters inside the crystalline host.
Keywords
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