Thermal noise in junction-gate field-effect transistors

1 March 1966

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. ED-13 (3) , 323-329
https://doi.org/10.1109/t-ed.1966.15688

Abstract

Measurements are reported on the device parameters and the noise properties of junction-gate field-effect transistors and the results are compared with theory. It is found that the high-frequency input conductance g11and the high-frequency gate-drain conductance g12vary as the square of the frequency and show practically full thermal noise. The high-frequency transconductance decreases with increasing frequency, as expected theoretically. The high-frequency output noise of the FET for short-circuited input is the sum of the low-frequency noise of the FET and the thermal noise of |g12|. A small correlation effect between the short-circuit gate noise and the short-circuit drain noise exists and agrees with theory. An approximate expression for the noise figure is given that is reasonably correct up to the cutoff frequency of the FET.

Keywords

This publication has 5 references indexed in Scilit:

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