Inhomogeneous strain in individual quantum dots probed by transport measurements
- 6 April 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (14) , 1739-1741
- https://doi.org/10.1063/1.121169
Abstract
Resonant tunnelingmeasurements are used to probe the inhomogeneous strain in individual SiGe quantum dots. Current–voltage characteristics of strained Si/SiGe resonant tunneling diodes of diameter D⩽0.25 μ m exhibit additional fine quasi-periodic structure in the resonant peaks. The fine structure is consistent with lateral quantization in the SiGe quantum well due to in-plane confining potentials arising from inhomogeneous strain, which we calculate by finite element techniques for various D . Quenching of the fine structure by a magnetic field is consistent with the effective length scale of the strain-induced potential.Keywords
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