Structural characterization of ultra-thin (001) silicon films bonded onto (001) silicon wafers:: a transmission electron microscopy study
- 6 February 2001
- journal article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 4 (1-3) , 101-104
- https://doi.org/10.1016/s1369-8001(00)00159-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Huge differences between low- and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafersApplied Physics Letters, 2000
- Ultra thin silicon films directly bonded onto silicon wafersMaterials Science and Engineering: B, 2000
- How to control the self-organization of nanoparticles by bonded thin layersSurface Science, 1999
- Lateral ordering of quantum dots by periodic subsurface stressorsApplied Physics Letters, 1999
- Oxide precipitation at silicon grain boundariesApplied Physics Letters, 1997
- Atomic Structure of the Interfaces Between Silicon Directly Bonded WafersMRS Proceedings, 1995
- Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafersApplied Physics A, 1990
- Theory of Dislocations (2nd ed.)Journal of Applied Mechanics, 1983
- TEM observations on grain boundaries in sintered siliconPhilosophical Magazine A, 1979
- The low-angle [011] tilt boundary in germanium II. Theoretical analysis of observed configurations and stabilityPhilosophical Magazine A, 1979