Ellipsometric assessment of (Ga, Al) As/GaAs epitaxial layers during their growth in an organometallic VPE system
- 1 February 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 46 (2) , 245-252
- https://doi.org/10.1016/0022-0248(79)90064-2
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Crystal growth kinetics in (GaAs)n−(AlAs)m superlattices deposited by molecular beam epitaxyJournal of Crystal Growth, 1978
- Appareillage et méthodologie d'étude des surfaces de GaAs en cours de croissance en épitaxie phase vapeurRevue de Physique Appliquée, 1976