Beam coupling in undoped GaAs at 106 μm using the photorefractive effect
- 1 August 1984
- journal article
- Published by Optica Publishing Group in Optics Letters
- Vol. 9 (8) , 350-352
- https://doi.org/10.1364/ol.9.000350
Abstract
We have observed beam coupling and degenerate four-wave mixing in high-resistivity, undoped GaAs at 1.06 μm that is due to the photorefractive effect. The photorefractive species is thought to be the deep donor EL2. The measured values of two-wave gain are comparable with those measured in Bi12SiO20. The response time is measured to be 20 μsec at an intensity of 4 W/cm2. This exceptionally fast photorefractive response time (compared with that of oxide electro-optic materials) is due primarily to the large mobility of GaAs.Keywords
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