Defect spectroscopy in a-Si:H using infrared excited luminescence and electron spin resonance
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 444-446
- https://doi.org/10.1016/0022-3093(89)90612-1
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Excitation-energy dependence of optically induced ESR ina-Si:HPhysical Review B, 1989