Submicrometer optical lithography using a double-layer resist by a single development technology

1 December 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (12) , 1861-1866
https://doi.org/10.1109/t-ed.1984.21802

Abstract

Submicrometer photoresist patterns having 3:1 vertical/ horizontal aspect ratios have been fabricated on a nonplanar wafer surface with steps of up to 1 µm by a new technology which can use a conventional LSI photolithographic system. The new technology is simply composed of forming the first layer with a blanket exposure including special surface treatment and the second layer, all in the same spinner, with the UV mask exposure, and patterning by a single development step. Although some ambiguities about the mechanism of the stable double-layer formation remain, the technology is proved to have high throughput, stable reproducibility, and fine patterning ability even on a reflective metal such as aluminum.

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