Reduction of lateral diffusion of photoelectrons in silicon photodiode imager arrays by internal gettering

1 October 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (10) , 1392-1394
https://doi.org/10.1109/t-ed.1983.21305

Abstract

The lateral diffusion of photoelectrons to adjacent picture elements in a silicon linear photodiode array is reduced in substrates with a high density of oxygen precipitates formed by internal gettering. The signal due to diffusion in adjacent pixels, normalized to the illuminated pixel signal, was reduced by a factor of 1.6 for pixels with centers 48 µm apart and by a factor of 10 for pixels farther apart; there was no significant decrease in sensor quantum efficiency. These results are interpreted with a numerical model that solves the three-dimensional diffusion equation for a substrate with different lifetimes in the surface and internal regions.

Keywords

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