Integrated Test for Silicon Front Ends
- 19 April 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave Magazine
- Vol. 11 (3) , 87-94
- https://doi.org/10.1109/mmm.2010.936076
Abstract
Silicon-based technologies have enabled the monolithic integration of transceiver circuits with operational frequencies up into the millimeter-wave regime. While high integration relaxes the requirements on RF chip-to-chip interconnects and external circuitry, it imposes serious challenges upon the traceability of failure mechanisms and functional errors of the individual building blocks that comprise the front-end. Additionally, expensive external measurement equipment in combination with complex, error-prone, and time-consuming calibration procedures, necessitates the development of on-chip test modules. It has been shown that a variety of built-in test schemes are currently the topic of research for both the mixed-signal and microwave domain. Solutions for the individual building blocks that will enable direct verification of performance parameters have been presented throughout this article. Current RF transceiver architectures will require a mixture of both paradigms for successful implementation of integrated test strategies. It is the authors' belief that the application of such concepts is a must for future integrated transceiver systems to meet the stringent requirements of time-to-market and low-cost of mass market consumer products.Keywords
This publication has 22 references indexed in Scilit:
- A CMOS focal-plane array for heterodyne terahertz imagingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- Schottky Barrier Diodes for Millimeter Wave SiGe BiCMOS Applications2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2006
- A 60 mW per Lane, 4$,times,$23-Gb/s 2$ ^7 -$1 PRBS GeneratorIEEE Journal of Solid-State Circuits, 2006
- Bipolar Microwave RMS Power DetectorsIEEE Journal of Solid-State Circuits, 2006
- Embedded Loopback Test for RF ICsIEEE Transactions on Instrumentation and Measurement, 2005
- 100-Gb/s 2/sup 7/-1 and 54-Gb/s 2/sup 11/-1 PRBS generators in SiGe bipolar technologyIEEE Journal of Solid-State Circuits, 2005
- A CMOS RF RMS Detector for Built-in Testing of Wireless TransceiversPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Schottky barrier diodes for millimeter wave detection in a foundry CMOS processIEEE Electron Device Letters, 2005
- RF power detector using a silicon MOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-power monolithic RF peak detector analysisIEEE Journal of Solid-State Circuits, 1995