Improved TEM samples of semiconductors prepared by a small‐angle cleavage technique
- 4 February 1993
- journal article
- Published by Wiley in Microscopy Research and Technique
- Vol. 24 (2) , 180-184
- https://doi.org/10.1002/jemt.1070240210
Abstract
A small‐angle cleavage technique has been developed that produces superior transmission electron microscope (TEM) samples of semiconductors and related materials. The technique involves back‐thinning the sample to approximately 100 μm, then scribing a groove on this back face at a specified small angle to a standard cleavage plane. The sample is cleaved along this scribe line followed by cleaving along the standard cleavage plane to produce a thin wedged sample. Samples prepared by this method are characterized and compared with conventional and low‐angle ion milled samples. The technique is illustrated, and the characteristic geometry of the cleaved sample is explained in terms of a simplified cleavage model.Keywords
This publication has 5 references indexed in Scilit:
- Multilayer mirrors for XUV Ge laser wavelengthsPublished by SPIE-Intl Soc Optical Eng ,1992
- Small-angle cleavage of semiconductors for transmission electron microscopyUltramicroscopy, 1991
- The measurement of the roughness of W/Si multilayers using the Fresnel methodUltramicroscopy, 1990
- Surface Energy of Germanium and SiliconJournal of the Electrochemical Society, 1963
- Energy Relations of the Surface of Solids I. Surface Energy of the DiamondThe Journal of Chemical Physics, 1942