Performance and reliability of InAlAs/InGaAs/lnP HEMTs technology for millimeter wave applications

23 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 62-64
https://doi.org/10.1109/gaasrw.1997.656127

Abstract

Recently, InAlAs/InGaAs/InP HEMTs have demonstrated the superior noise and power performance at millimeter wave (MMW) frequencies. While reliability data of 0.1 /spl mu/m low noise InP discrete HEMTs has been reported on devices stressed by DC conditions at elevated temperature, there have been few reports on reliability data of InP HEMT MMIC LNAs and InP HEMTs designed for power applications. To achieve a robust InP HEMT technology for reliable MMW applications such as transceivers, it is essential to examine reliability of both low noise and power InP HEMTs in detail. The reliability investigation in this paper performed on various devices and MMIC parts include high temperature lifetesting and high reverse gate bias stress at room temperature. This initial reliability results shown here point towards a robust InP HEMT low noise and power technology.

Keywords

This publication has 0 references indexed in Scilit: