Self-Limited Facet Growth for GaAs Tetrahedral Quantum Dots
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (1A) , L104-106
- https://doi.org/10.1143/jjap.32.l104
Abstract
When metal-organic chemical vapor deposition is used to fabricate GaAs tetrahedral quantum dots by selective epitaxy on triangular windows of (111)B GaAs, there is a condition under which growth automatically stops before the tetrahedral shape is completed. Under a constant growth condition, the size of self-stopped (111)B triangular top facets is extremely uniform and is not influenced by fluctuation of mask window size. Experiments showing that the size of top facet increases with increasing substrate temperature and with decreasing trimethylgallium partial pressure imply that the size is determined by the submicron diffusion length of Ga atoms on (111)B GaAs surface.Keywords
This publication has 10 references indexed in Scilit:
- Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal-organic chemical-vapor depositionJournal of Applied Physics, 1992
- Selective epitaxy of GaAs/AlGaAs on (111) B substrates by MOCVD and applications to nanometer structuresJournal of Crystal Growth, 1991
- GaAs tetrahedral quantum dot structures fabricated using selective area metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Surface diffusion length observed by in situ scanning microprobe reflection high-energy electron diffractionJournal of Crystal Growth, 1991
- Lateral quantum well wires fabricated by selective metalorganic chemical vapor depositionApplied Physics Letters, 1990
- Application of selective epitaxy to fabrication of nanometer scale wire and dot structuresApplied Physics Letters, 1990
- Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wiresJournal of Crystal Growth, 1989
- New GaAs quantum wires on {111}B facets by selective MOCVDElectronics Letters, 1989
- Narrow two-dimensional electron gas channels in GaAs/AlGaAs sidewall interfaces by selective growthApplied Physics Letters, 1987
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985