Influence of thin metal as a top electrode on the characteristics of P-I-N a- Si:H solar cells

Publisher Website
Google Scholar
Abstract
Hydrogenated amorphous silicon (a‐Si:H) p‐n junction solar cells have been fabricated which utilize various metals (Cr, Cu, Al, Pd, Ag) as a top electrode. Experimental and theoretical analysis of photovolatic performance in a‐Si:H solar cells as a function of resistivity, optical transmittance, and work function of thin metal films are presented. Metal work function changes the effective built‐in potential of p‐n junction diodes. Furthermore, a lower work function metal forms a good Ohmic contact for substrate –P+‐I‐N+– electrode cells, and high work function metals improve Voc of substrate ‐N‐I‐P cells. Typical Voc values are 760 mV with Cr–, Cu–, and Al–N‐I‐P–stainless steel (SS), 700 mV with Pd–N‐I‐P‐SS, 600 mV with Pd–P‐I‐N‐SS, and 540 mV with Cr–P‐I‐N‐SS. Jsc is strongly dependent on transmittance and resistivity of the metal films. Fill factor is independent of the choice of a top electrode. An efficient of 2% has been obtained on a 2 cm2 solar cell.

This publication has 4 references indexed in Scilit: