Measurement of spectrum, bias dependence, and intensity of spontaneous emission in GaAs lasers

Publisher Website
Google Scholar
Abstract
Spontaneous emission spectra and intensity measurements are made on buried heterostructure lasers with transparent windows above the active stripe. The bias voltage V, where eV is the separation of quasi‐Fermi levels, is determined from spectral measurements. The total luminescence intensity increases as exp(eV/nkT), where n changes from 1.0 to about 2 as V increases from 1.3 V to the threshold voltage of 1.415 V. The change in n is due primarily to saturation of the low‐energy electron states as a result of electron degeneracy. The spectral determination of bias voltage is justified by the close agreement between the threshold voltage determined by spectral analysis and the voltage determined by extrapolation of directly measured light versus voltage data. Calibration of the absolute radiative rate with optical absorption data yields a predicted radiative recombination current of Jth/d≊5.8 kA cm−2 μm−1, in reasonable agreement with empirical threshold data.