Optimised proton implantation step for vertical-cavity surface-emitting lasers

Abstract
The influence of proton implantation in the distributed Bragg reflectors of vertical-cavity surface-emitting laser structures has been studied via measurement of the photoluminescence for different implantation and annealing conditions. It is shown that by optimal annealing the isolating layer can be positioned close to the active region with no detectable deterioration of photoluminescence.

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