Stability and epitaxy of NiAl and related intermetallic films on III-V compound semiconductors

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Abstract
The cubic transition metal-gallium and transition metal-aluminum intermetallic compounds with the CsCl structure (e.g., NiGa and CoAl) have been identified as candidate materials for stable and epitaxical contacts to III-V semiconductors. Fabrication of these stable and epitaxical contacts using only conventional vacuum deposition (e.g., electron gun evaporation) has been demonstrated for the NiAl/GaAs system. It is expected that this unique class of contact materials will find application in III-V-based field-effect transistors as well as novel electronic and photonic devices based on multiple semiconductor/metal heterojunctions.