The reactive Cr/InP and Mn/InP interfaces

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Abstract
Soft x‐ray photoemission spectroscopy studies were performed in ultrahigh vacuum on cleaved n‐InP(110) with sequential room‐temperature Cr and Mn depositions of up to 30 Å. The In 4d, P 2p, and Cr 3p or Mn 3p core levels were monitored as a function of coverage. Both systems exhibited strong metallic In‐phase separation and surface segregation, formation of a metallic phosphide, and no evidence of island formation. Fermi level‐pinning positions of 0.6 and 0.3 V below the CBM were estimated for the Cr and Mn systems, respectively, by deconvoluting the substrate from the interfacial components of the In core lines. These results are discussed in the context of different models of Schottky barrier formation.

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