Observation of power dependent linewidth enhancement factor in 1.55 μm strained quantum well lasers
- 26 September 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (20) , 1840-1841
- https://doi.org/10.1049/el:19911143
Abstract
An optical power dependence of the linewidth enhancement factor in 1.55 μm strained multiquantum well distributed feedback lasers operating at far above the lasing threshold (up to 10.5 times) has been observed. The linewidth enhancement factor, measured through optical injection locking, increases significantly at high power. A correlation between increase in the linewidth enhancement factor and the linewidth floor is shown.Keywords
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