Enhancement of the magnetoresistance due to structural transition in Mg-doped perovskite Mn oxides

19 August 1996

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 69 (8) , 1160-1162
https://doi.org/10.1063/1.117381

Abstract

Substitution of magnesium for manganese in mixed perovskite La1−xSrxMnO3was found to reduce the electrical conductivity and the Curie temperature Tc. A remarkable jump in the resistivity ρ was observed in the 6% Mg-doped crystal with x=0.175. This sample remains semiconducting at low temperatures, contrary to the Mg-free crystal. The abrupt change of ρ reflects a first-order structural transition at a temperature Ts just below Tc. An applied magnetic field decreased Ts, leading to an enhancement of the magnetoresistance between Ts (0) and Ts (H). The microscopic properties of Mn3+ and Mn4+ ions due to Sr2+and Mg2+ substitutions were illustrated by 55Mn nuclear magnetic resonance study.

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