Formation of periodic structures during excimer laser-assisted heteroepitaxy of GaP
- 15 March 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (6) , 2913-2918
- https://doi.org/10.1063/1.345409
Abstract
Periodic structures have been obtained during nominally unpolarized excimer laser (ArF)-assisted organometallic vapor phase epitaxy of GaP on GaAs. Both crystalline properties and chemical composition of these structures have been examined. The chemical analysis showed a variation in composition across a ripple which was attributed to the modulated thermal profile due to interference.This publication has 21 references indexed in Scilit:
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