Model of backsurface gettering of metal impurities in silicon
- 1 November 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (9) , 830-832
- https://doi.org/10.1063/1.93710
Abstract
Metallic impurities can degrade silicon devices in many ways, and various gettering techniques are therefore used to immobilize these atoms at the backsurface of the wafer. A solution to the relevent diffusion equations is given here and used to obtain a simple formula relating the gettered atom density to the gettering temperature and time with the metal diffusivity in silicon as the main input. The model reproduces experimental trends quite well.Keywords
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