Comment on "Lattice Temperature during Pulsed Laser Annealing"
- 7 December 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 47 (23) , 1676
- https://doi.org/10.1103/physrevlett.47.1676
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.47.1676Keywords
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- Induced Absorption in Silicon under Intense Laser Excitation: Evidence for a Self-Confined PlasmaPhysical Review Letters, 1981
- Raman measurements of temperature during cw laser heating of siliconJournal of Applied Physics, 1980
- Kinetic temperature measurement of the front surface of a target exposed to an intense pulsed electron beamJournal of Applied Physics, 1977
- Temperature Dependence of Raman Scattering in SiliconPhysical Review B, 1970