Photoluminescence of GaN: Effect of electron irradiation
- 16 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (20) , 2968-2970
- https://doi.org/10.1063/1.122646
Abstract
The effect of electron irradiation on the optical properties of GaN material with various electrical conductivity (i.e., n type, compensated, and p type) is studied in detail by photoluminescence (PL) spectroscopy. Electron irradiation with a dose <1017 cm−2 is found to have a minor effect on photoluminescence, indicating a high radiation resistance of GaN. For higher doses, two major effects of electron irradiation on PL properties can be distinguished, i.e., radiation-induced quenching of the PL, likely caused by a radiation-induced formation of competing recombination channels, and radiation-induced formation/activation of new optically active centers.Keywords
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