Excess (1/f ) noise in Hg0.7Cd0.3Te p-n junctions
- 1 January 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 3 (1) , 192-194
- https://doi.org/10.1116/1.573198
Abstract
We report on 1/f noise in reverse-biased LPE Hg0.7Cd0.3Te p-n junctions. These studies have emphasized temperatures where the saturation current is limited by diffusion of minority carriers. The 1/f noise is found to originate from an area source, and varies linearly with reverse bias voltage (V) for ‖qV/kT‖1. It is also found to have a temperature dependence similar to that of the intrinsic carrier concentration. No increase in noise is observed as a result of induced photocurrent. We conclude that the noise originates in the depletion region in the bulk.Keywords
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